The possibility of placing contact plates with a pitch of 2 microns and a positioning accuracy of 350 nm was provided by the International Microelectronics Research Center (imec), writes the British electronics magazine Electronics Weekly on May 31.
The developed process allows connections to be established between copper and silicon carbonitride (SiCN, a semiconductor with a wide bandgap – approx. IA Krasnaya Vesna) with a contact pitch of 2 µm and a precision of 350 nm.
According to the researchers, in the future it is possible to reduce the contact pitch to 400 nm and even 200 nm. For comparison, the theoretical limit for soldering contacts, according to various estimates, is 10 to 5 microns.
This compaction of the connections between the crystal and the substrate will provide new opportunities for the formation of complex multicrystalline systems on the substrate. In particular, this is necessary to integrate more memory into a case with different computing nodes.
Source: Rossa Primavera
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